Sn掺杂Bi2Te2.7Se0.3薄膜材料的微结构及热电性能研究
Microstructure and Thermo-electric Properties of Sn-doped Bi2Te2.7Se0.3 Thin Film
江跃珍1, 段兴凯 2, 宗崇文2, 侯文龙1
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作者单位：1. 九江学院 电子工程学院, 江西 九江 332005; 2. 九江学院 机械与材料工程学院 新能源材料研究中心, 江西 九江 332005)
中文关键字：真空熔炼； 热蒸发； Sn掺杂； 薄膜； 热电性能
英文关键字：vacuum melting; thermal evaporation; Sn doping; thin film; thermo-electric properties
中文摘要：采用真空熔炼法合成(Bi1-xSnx)2Te2.7Se0.3合金，再通过热蒸发技术在473 K玻璃基体上沉积了厚800 nm的Sn掺杂Bi2Te2.7Se0.3热电薄膜。利用X射线衍射技术对薄膜的相结构进行表征；采用表面粗糙度测量仪测定薄膜厚度；采用四探针法和温差电动势法分别测量薄膜的电阻率和 Seebeck系数；采用薄膜的电阻率和Seebeck系数Sn掺杂浓度对(Bi1-xSnx)2Te2.7Se0.3薄膜热电性进行分析。结果表明，Sn掺杂浓度为0.003时，热电功率因子提高到12.8 μW/K2·cm；Sn掺杂浓度从0.004增加到0.01，薄膜为P型半导体，热电功率因子减小。
英文摘要：(Bi1-xSnx)2Te2.7Se0.3 bulk alloy was synthesized by vacuum melting method. Sn-doped Bi2Te2.7Se0.3 thermo-
electric thin films with 800 nm thickness was deposited on glass substrate by thermal evaporation at 473 K. The microstructure of the thin film was analyzed by X-ray diffraction (XRD). The film thickness of the sample was measured by ellipsometer. The electrical resistivity of the thin film was measured at 300 K by DC four-probe methods. The seebeck coefficient was determined by thermo-electromotive force. The effects of Sn-doping concentration on the thermo-electric properties of (Bi1-xSnx)2Te2.7Se0.3 thin film were investigated by the analysis of seebeck coefficient and electrical resistivity. The results show that when the thermo-electric power factor is enhanced to 12.8 μW/K2·cm (x=0.003), Sn doping concentration is 0.003. From 0.004 to 0.01 Sn doping concentration, the thin film shows P-type conduction. The seebeck coefficient and electrical resistivity gradually decrease with increasing Sn doping concentration.